IDENTITY BETWEEN SPREADING AND NOISE DIFFUSION COEFFICIENTS FOR HOT CARRIERS IN SEMICONDUCTORS.NOUGIER JP.1978; APPL. PHYS. LETTERS; USA; DA. 1978; VOL. 32; NO 10; PP. 671-673; BIBL. 25 REF.Article

SPACE CHARGE INDUCED IN SEMICONDUCTORS BY HOT CARRIER REGIMENOUGIER JP.1973; PHYS. LETTERS, A; NETHERL.; DA. 1973; VOL. 43; NO 5; PP. 451-452; BIBL. 2 REF.Serial Issue

ANISOTROPY IN DIFFUSION-NOISE TEMPERATURE AND DIFFERENTIAL MOBILITY INDUCED IN SEMICONDUCTORS BY AN EXTERNAL ELECTRIC FIELDNOUGIER JP.1973; PHYSICA; PAYS-BAS; DA. 1973; VOL. 64; NO 1; PP. 209-213; BIBL. 12 REF.Serial Issue

DIFFERENTIAL RELAXATION TIMES AND DIFFUSIVITIES OF HOT CARRIERS IN ISOTROPIC SEMICONDUCTORS.NOUGIER JP; ROLLAND M.1977; J. APPL. PHYS.; U.S.A.; DA. 1977; VOL. 48; NO 4; PP. 1683-1687; BIBL. 24 REF.Article

ANISOTROPY OF THE DIFFERENTIAL CONDUCTIVITY AND OF THE TRANSVERSE DIFFUSION COEFFICIENT IN N-TYPE SILICON.GASQUET D; NOUGIER JP.1978; APPL. PHYS. LETTERS; USA; DA. 1978; VOL. 33; NO 1; PP. 89-91; BIBL. 12 REF.Article

INTERVALLEY TRANSFERS OF HOT ELECTRONS IN SILICON BELOW 77 K.NOUGIER JP; ROLLAND M; GASQUET D et al.1976; PHYS. LETTERS, A; NETHERL.; DA. 1976; VOL. 56; NO 4; PP. 314-316; BIBL. 8 REF.Article

HOT-ELECTRON INTERVALLEY TRANSFER IN SILICON.NOUGIER JP; ROLLAND M; GASQUET D et al.1975; PHYS. REV., B; U.S.A.; DA. 1975; VOL. 11; NO 4; PP. 1497-1502; BIBL. 19 REF.Article

NOISE SOURCES OF HOT CARRIERS IN SPACE-CHARGE REGIMESNOUGIER JP; VAISSIERE JC; CASQUET D et al.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 9; PP. 5683-5688; BIBL. 12 REF.Article

STUDY OF THE CONDUCTING CHANNEL OF THE JG FET. APPLICATION TO THE NOISE IN SATURATION RANGE.RIGAUD D; NOUGIER JP; SODINI D et al.1974; PHYSICA; PAYS-BAS; DA. 1974; VOL. 74; NO 3; PP. 613-622; BIBL. 8 REF.Article

LOW NOISE "OHMIC" CONTACTS ON N-TYPE SILICON.ROLLAND M; NOUGIER JP; GASQUET D et al.1977; SOLID-STATE ELECTRON.; G.B.; DA. 1977; VOL. 20; NO 4; PP. 323-331; H.T. 2; BIBL. 13 REF.Article

DETERMINATION OF TRANSIENT REGIME OF HOT CARRIERS IN SEMICONDUCTORS, USING THE RELAXATION TIME APPROXIMATIONSNOUGIER JP; VAISSIERE JC; GASQUET D et al.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 2; PP. 825-832; BIBL. 24 REF.Article

ON THE DIFFUSIVITY OF HOLES IN SILICONNAVA F; CANALI C; REGGIANI L et al.1979; J. APPL. PHYS.; USA; DA. 1979; VOL. 50; NO 2; PP. 922-924; BIBL. 16 REF.Article